TDMGe (suomeksi)

Määritelmät:

Tetrakis-Dimethylamino-Germane, the metalorganic source for Germanium Nitride (GeN) in MOCVD of semiconductors. It grows GeN instead of Ge, and is used at either high temperatures (600-800 C) or with plasma because of its very low vapor pressure and higher decomposition temperature. Also known as '''TDMAGe''' and pronounced as T-Damage.